nProber III System for Semiconductors

Fault localization and transistor characterization

The Thermo Scientific™ nProber III system allows users to characterize individual transistor performance down to the 7nm node. nProber III system can also be used to localize a wide variety of electrical faults prior to extracting thin sectional samples for physical failure analysis in a transmission electron microscope (TEM). The high accuracy fault localization provided by the nProber III system can dramatically increase TEM fault imaging success rates. nProber III system productivity and ease of use make it an ideal solution for optimized failure analysis workflows.

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Key Benefits

Improve time to results with the most productive, easiest to use nanoprober on the market
Nanoprobing improves TEM efficiency by localizing faults prior to the lamella cut
Automated processes reduce the skill required to run the instrument

Eight probes enable butterfly, DC bit cell and bit cell pulsing applications on advanced node devices.

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nProber III Video

The nProber III platform is our most advanced SEM based nanoprobing platform. It provides electrical characterization and fault isolation capability for process development, device design debug and failure analysis down to the 7 nm node.

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Contact a Sales or Service Representative