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Electron Microscopy Solutions
    

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In situ investigations of temperature-dependent domain dynamics

There is an increasing interest in novel ferroic materials, especially in device applications such as transistors, memory devices, tunneling barriers, etc. The functionality of such materials is enabled by the reversible switching between equivalent states (or domains) that form to minimize the system's free energy. This switching behavior strongly depends on the domain structure pattern and their mobility under external stimuli (electrical, mechanical, temperature, etc.)

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