Focused Ion Beam (FIB) systems utilize a finely focused beam of gallium ions operated at low-beam currents for imaging and at high-beam currents for site-specific milling. Their versatility makes them popular for a wide variety of applications including advanced circuit edit, and revealing below-the-surface defects in advanced materials and devices.
FEI currently offers the following FIB systems:
The FEI V600CE focused ion beam (FIB) system incorporates the latest developments in ion column design, gas delivery and end point detection to provide fast, efficient, cost-effective editing on advanced integrated circuits at the 65 nm technology node and beyond. The V600CE is specifically designed to meet the challenges of advanced designs and processes: smaller geometries, higher circuit densities, exotic materials and complex interconnect structures.
Learn more about the V600CE [PDF 169KB]
The FEI V600FIB is the most efficient, flexible, and cost-effective circuit edit tool available for semiconductor labs. It enables fast, versatile modification and analysis with a single-column, focused ion beam (FIB) that effectively delivers high throughput circuit modification, cross-sectioning, and failure analysis.
Experience our interactive demo and configure your own V600FIB
FIB Fundamentals
This following articles from the May 2007 MRS Bulletin cover the basic FIB instrument and the fundamentals of ion–solid interactions that lead to the many unique FIB capabilities as well as some of the unwanted artifacts associated with FIB instruments.